Chemical vapor deposition reactor

An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials

Chemical vapor deposition growth

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature

Chemical vapor deposition growth

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet

Chemical vapor deposition growth

The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells

Conformal GaP layers on Si wire arrays for solar energy applications

We report conformal, epitaxial growth of GaP layers on arrays of Si microwires. Silicon wires grown using chlorosilane chemical vapor deposition were coated with GaP grown by metal-organic chemical vapor deposition. The crystalline quality of conformal, epitaxial GaP/Si wire arrays was assessed by transmission electron microscopy and x-ray diffraction. Hall measurements and photoluminescence show p- and n-type doping with high electron mobility and bright optical emission. GaP pn homojunction diodes on planar reference samples show photovoltaic response with an open circuit voltage of 660 mV

Perfection of materials technology for producing improved Gunn-effect devices Interim scientific report

Chemical vapor deposition of epitaxial gallium arsenid

Principles and applications of CVD powder technology

Chemical vapor deposition (CVD) is an important technique for surface modification of powders through either grafting or deposition of films and coatings. The efficiency of this complex process primarily depends on appropriate contact between the reactive gas phase and the solid particles to be treated. Based on this requirement, the first part of this review focuses on the ways to ensure such contact and particularly on the formation of fluidized beds. Combination of constraints due to both fluidization and chemical vapor deposition leads to the definition of different types of reactors as an alternative to classical fluidized beds, such as spouted beds, circulating beds operating in turbulent and fast-transport regimes or vibro-fluidized beds. They operate under thermal but also plasma activation of the reactive gas and their design mainly depends on the type of powders to be treated. Modeling of both reactors and operating conditions is a valuable tool for understanding and optimizing these complex processes and materials. In the second part of the review, the state of the art on materials produced by fluidized bed chemical vapor deposition is presented. Beyond pioneering applications in the nuclear power industry, application domains, such as heterogeneous catalysis, microelectronics, photovoltaics and protection against wear, oxidation and heat are potentially concerned by processes involving chemical vapor deposition on powders. Moreover, simple and reduced cost FBCVD processes where the material to coat is immersed in the FB, allow the production of coatings for metals with different wear, oxidation and corrosion resistance. Finally, large-scale production of advanced nanomaterials is a promising area for the future extension and development of this technique

CVD of solid oxides in porous substrates for ceramic membrane modification

The deposition of yttria-doped zirconia has been experimented systematically in various types of porous ceramic substrates by a modified chemical vapor deposition (CVD) process operating in an opposing reactant geometry using water vapor and corresponding metal chloride vapors as reactants. The effects of substrate pore dimension and structure, bulk-phase reactant concentration, reactant diffusivity in substrate pores and deposition temperature are experimentally studied and explained qualitatively by a theoretical modeling analysis. The experimental and theoretical results suggest a reaction mechanism which depends on water vapor and chloride vapor concentrations. Consequently, the diffusivity, bulk-phase reactant concentration, and substrate pore dimension are important in the CVD process. Effects of deposition temperature on the deposition results and narrow deposition zone compared to the substrate thickness also suggest a Langmuir-Hinshelwood reaction mechanism involved in the CVD process with a very fast CVD reaction rate. Gas permeation data indicate that whether deposition of solid in substrate pores could result in the pore-size reduction depends strongly on the initial pore-size distribution of the substrate

Chemical Vapor Deposition of Silicon from Silane Pyrolysis

The four basic elements in the chemical vapor deposition (CVD) of silicon from silane are analytically treated from a kinetic standpoint. These elements are mass transport of silane, pyrolysis of silane, nucleation of silicon, and silicon crystal growth. Rate expressions that describe the various steps involved in the chemical vapor deposition of silicon were derived from elementary principles. Applications of the rate expressions for modeling and simulation of the silicon CVD are discussed

Plasma-Enhanced Vapor Deposition Process for the Modification of Textile Materials

Nowadays many techniques are used for the surface modification of fabrics and textiles. Two fundamental techniques based on vacuum deposition are known as chemical vapor deposition (CVD) and physical vapor deposition (PVD). In this chapter, the effect of plasma-enhanced physical and chemical vapor deposition on textile surfaces is investigated and explained